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1N5806TR
Discrete Semiconductor Products

1N6079

Active
Microchip Technology

50V 12A UFR,FRR B-BODY ROHS COMPLIANT: YES

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1N5806TR
Discrete Semiconductor Products

1N6079

Active
Microchip Technology

50V 12A UFR,FRR B-BODY ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification1N6079
Current - Average Rectified (Io)2 A
Current - Reverse Leakage @ Vr10 µA
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]155 °C
Operating Temperature - Junction [Min]-65 C
Package / CaseA, Axial
Reverse Recovery Time (trr)30 ns
Speed200 mA, 500 ns
Supplier Device PackageA, Axial
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]50 V
Voltage - Forward (Vf) (Max) @ If1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 29.86
Microchip DirectN/A 1$ 32.16
NewarkEach 100$ 29.86
500$ 28.71

Description

General part information

1N6079US-Rectifier Series

This "Ultrafast Recovery" rectifier diode series is military qualified to MIL-PRF19500/503 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 3, 6, and 12 Amp rated rectifiers (TL =70ºC) in different package sizes for working peak reverse voltages from 50 to 150 volts are hermetically sealed with voidless-glass construction using an internal "Category I" metallurgical bond. These devices are also available in surface mount MELF package configurations by adding a "US" suffix (see separate data sheet for 1N6073US thru 1N6081US). microchip also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including standard, fast and ultrafast device types in both through-hole and surface mount packages.

Documents

Technical documentation and resources