Specification	2SA2013-TD-E

Current - Collector (Ic) (Max) [Max]	4 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	200
Frequency - Transition	400 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-243AA
Power - Max [Max]	3.5 W
Supplier Device Package	PCP
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	340 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

2SA2013 Series

Bipolar Transistor, -50V, -4A, Low VCE(sat), (PNP)NPN Single PCP

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Supplier Device Package	Mounting Type	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Operating Temperature	Frequency - Transition	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type
ON Semiconductor 2SA2013-TD-E	200	3.5 W	PCP	Surface Mount	1 µA	340 mV	4 A	150 °C	400 MHz	TO-243AA	50 V	PNP

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

2SA2013 is a Bipolar Transistor, -50V, -4A, Low VCE(sat), (PNP)NPN Single PCP for DC-DC Converter Applications.