Specification	SSM3K72CTC,L3F

Current - Continuous Drain (Id) @ 25°C	150 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	0.35 nC
Input Capacitance (Ciss) (Max) @ Vds	17 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-883, SC-101
Power Dissipation (Max)	500 mW
Rds On (Max) @ Id, Vgs	3.9 Ohm
Supplier Device Package	CST3C
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.1 V

SSM3K72 Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 60 V, 0.15 A, 3.9 Ω@10V, CST3C

Part	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Rds On (Max) @ Id, Vgs	Mounting Type	FET Type	Supplier Device Package	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature	Power Dissipation (Max)
Toshiba Semiconductor and Storage SSM3K72CFS,LF	60 V	150 mW	MOSFET (Metal Oxide)	150 °C	-55 °C	2.1 V	170 mA	17 pF	20 V	3.9 Ohm	Surface Mount	N-Channel	SSM	SC-75 SOT-416	0.35 nC	4.5 V 10 V
Toshiba Semiconductor and Storage SSM3K72CTC,L3F	60 V		MOSFET (Metal Oxide)			2.1 V	150 mA	17 pF	20 V	3.9 Ohm	Surface Mount	N-Channel	CST3C	SC-101 SOT-883	0.35 nC	4.5 V 10 V	150 °C	500 mW

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 60 V, 0.15 A, 3.9 Ω@10V, CST3C

Technical documentation and resources