High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 60 V, 0.15 A, 3.9 Ω@10V, CST3C
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 60 V, 0.15 A, 3.9 Ω@10V, CST3C
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 60 V, 0.15 A, 3.9 Ω@10V, CST3C
| Part | Drain to Source Voltage (Vdss) | Power Dissipation (Max) [Max] | Technology | Operating Temperature [Max] | Operating Temperature [Min] | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Rds On (Max) @ Id, Vgs | Mounting Type | FET Type | Supplier Device Package | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 60 V | 150 mW | MOSFET (Metal Oxide) | 150 °C | -55 °C | 2.1 V | 170 mA | 17 pF | 20 V | 3.9 Ohm | Surface Mount | N-Channel | SSM | SC-75 SOT-416 | 0.35 nC | 4.5 V 10 V | ||
 Toshiba Semiconductor and Storage | 60 V | MOSFET (Metal Oxide) | 2.1 V | 150 mA | 17 pF | 20 V | 3.9 Ohm | Surface Mount | N-Channel | CST3C | SC-101 SOT-883 | 0.35 nC | 4.5 V 10 V | 150 °C | 500 mW |