Discrete Semiconductor Products

JAN1N4245

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DIODE GEN PURP 200V 1A AXIAL

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Discrete Semiconductor Products

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DIODE GEN PURP 200V 1A AXIAL

Technical Specifications

Parameters and characteristics for this part

Specification	JAN1N4245

Current - Average Rectified (Io)	1 A
Current - Reverse Leakage	1 µA
Grade	Military
Mounting Type	Through Hole
Operating Temperature - Junction (Max)	175 °C
Operating Temperature - Junction (Min)	-65 °C
Package / Case	A, Axial
Package Name	A, Axial
Qualification	MIL-PRF-19500, 286
Reverse Recovery Time (trr)	5 µs
Speed	Standard Recovery
Speed - Fast Recovery (Minimum)	200 mA, 500 ns
Speed - Recovery Current	200 mA, 200 mA
Speed - Recovery Time	500 ns
Technology	Standard
Voltage - DC Reverse (Vr) (Max)	200 V
Voltage - Forward (Vf) (Max)	1.3 V

Part	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Grade	Qualification	Mounting Type	Voltage - DC Reverse (Vr) (Max)	Technology	Package / Case	Reverse Recovery Time (trr)	Current - Reverse Leakage	Voltage - Forward (Vf) (Max)	Package Name	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Speed - Recovery Time	Current - Average Rectified (Io)
Microchip Technology JAN1N4245	175 °C	-65 °C	Military	286 MIL-PRF-19500	Through Hole	200 V	Standard	A Axial	5 µs	1 µA	1.3 V	A Axial	200 mA 500 ns	Standard Recovery	200 mA 200 mA	500 ns	1 A

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3D models and CAD resources for this part

General part information

Diode 200 V 1A Through Hole A, Axial

Technical documentation and resources