Discrete Semiconductor Products

UPA2560T1H-T1-AT

Obsolete

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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Discrete Semiconductor Products

Obsolete

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

Technical Specifications

Parameters and characteristics for this part

Specification	UPA2560T1H-T1-AT

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	4.5 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	6.6 nC
Input Capacitance (Ciss) (Max) @ Vds	310 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-SMD, Flat Lead
Power - Max [Max]	2.2 W
Rds On (Max) @ Id, Vgs	50 mOhm
Supplier Device Package	8-VSOF
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

N-Channel Mos Field Effect Transistor For Switching

Part	Power - Max [Max]	Technology	Drain to Source Voltage (Vdss)	Package / Case	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Supplier Device Package	Configuration	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Feature	Operating Temperature	Mounting Type
Renesas Electronics Corporation UPA2560T1H-T1-AT	2.2 W	MOSFET (Metal Oxide)	30 V	8-SMD Flat Lead	50 mOhm	4.5 A	2.5 V	8-VSOF	2 N-Channel (Dual)	310 pF	6.6 nC	Logic Level Gate	150 °C	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	36000	$ 0.62

General part information

The UPA2560T1H is a N-Channel Mos Field Effect Transistor For Switching.

Technical documentation and resources