N-Channel Mos Field Effect Transistor For Switching
N-Channel Mos Field Effect Transistor For Switching
N-Channel Mos Field Effect Transistor For Switching
| Part | Power - Max [Max] | Technology | Drain to Source Voltage (Vdss) | Package / Case | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Supplier Device Package | Configuration | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Feature | Operating Temperature | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Renesas Electronics Corporation | 2.2 W | MOSFET (Metal Oxide) | 30 V | 8-SMD Flat Lead | 50 mOhm | 4.5 A | 2.5 V | 8-VSOF | 2 N-Channel (Dual) | 310 pF | 6.6 nC | Logic Level Gate | 150 °C | Surface Mount |