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DocumentsGUNN Diodes Cathode MG1001 - MG1060
Deep-Dive with AI
DocumentsGUNN Diodes Cathode MG1001 - MG1060
Technical Specifications
Parameters and characteristics for this part
| Specification | MG1021-M16 |
|---|---|
| Current - Max | 800 mA |
| Diode Type | Pin, Single |
| Package / Case | Stud |
| Power Dissipation (Max) | 50 mW |
| Voltage - Peak Reverse (Max) | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.00 | 1m+ |
| Microchip Direct | N/A | 1 | $ 410.61 | 1m+ |
| 50 | $ 393.94 | |||
| 100 | $ 370.57 | |||
| 250 | $ 353.86 | |||
| 500 | $ 340.52 | |||
| 1000 | $ 333.84 | |||
CAD
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Description
General part information
U-Band-Gunn-Diodes Series
GaAs Gunn diodes epi-down are fabricated from epitaxial layers grown at MSC using the chemical vapor deposition (CVD) epitaxy process. The layers are processed using propriety techniques resulting in low phase and 1/f noise. Our Gunn diodes are available in a variety of microwave ceramic packages are available for operation from 5.9-95 GHz.
Documents
Technical documentation and resources