Specification	RD3L140SPTL1

Current - Continuous Drain (Id) @ 25°C	14 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	27 nC
Input Capacitance (Ciss) (Max) @ Vds	1900 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	20 W
Rds On (Max) @ Id, Vgs [Max]	84 mOhm
Supplier Device Package	TO-252
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

RD3L140SPFRA Series

Pch -60V -14A Power MOSFET

Part	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Supplier Device Package	Mounting Type	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Vgs (Max)	Operating Temperature	FET Type	Technology	Grade	Qualification	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]
Rohm Semiconductor RD3L140SPFRATL	3 V	1900 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	TO-252	Surface Mount	4 V	10 V	84 mOhm	20 W	60 V	20 V	150 °C	P-Channel	MOSFET (Metal Oxide)	Automotive	AEC-Q101	14 A	27 nC
Rohm Semiconductor RD3L140SPTL1	3 V	1900 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	TO-252	Surface Mount	4 V	10 V	84 mOhm	20 W	60 V	20 V	150 °C	P-Channel	MOSFET (Metal Oxide)			14 A	27 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

RD3L140SPFRA is a automotive grade power MOSFET with Low on - resistance, suitable for switching.