Discrete Semiconductor Products

FDD86250

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ON Semiconductor

POWER MOSFET, N CHANNEL, 150 V, 50 A, 0.0184 OHM, TO-252 (DPAK), SURFACE MOUNT

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Search across all available documentation for this part.

DocumentsTechnical Data Sheet EN Datasheet +1

Discrete Semiconductor Products

FDD86250

Active

ON Semiconductor

POWER MOSFET, N CHANNEL, 150 V, 50 A, 0.0184 OHM, TO-252 (DPAK), SURFACE MOUNT

Deep-Dive with AI

DocumentsTechnical Data Sheet EN Datasheet +1

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FDD86250

Current - Continuous Drain (Id) @ 25°C	50 A, 8 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2110 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	132 W
Power Dissipation (Max)	3.1 W
Rds On (Max) @ Id, Vgs	22 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

FDD86252 Series

N-Channel Shielded Gate PowerTrench<sup>®</sup> MOSFET 150 V, 27 A, 52 mΩ

Part	Technology	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Vgs (Max)	Power Dissipation (Max)
ON Semiconductor FDD86252	MOSFET (Metal Oxide)	3.1 W 89 W	6 V 10 V	TO-252AA	-55 °C	150 °C	N-Channel	5 A 27 A	985 pF	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	16 nC	150 V	4 V	52 mOhm	20 V
ON Semiconductor FDD86250	MOSFET (Metal Oxide)	3.1 W	6 V 10 V	TO-252AA	-55 °C	150 °C	N-Channel	8 A 50 A	2110 pF	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3		150 V	4 V	22 mOhm	20 V	132 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.24
		10	$ 1.86
		100	$ 1.48
		500	$ 1.25
		1000	$ 1.06
	Digi-Reel®	1	$ 2.24
		10	$ 1.86
		100	$ 1.48
		500	$ 1.25
		1000	$ 1.06
	Tape & Reel (TR)	2500	$ 1.01
		5000	$ 0.97
Newark	Each (Supplied on Cut Tape)	1	$ 2.61
		10	$ 2.09
		25	$ 2.00
		50	$ 1.89
ON Semiconductor	N/A	1	$ 0.46

Description

General part information

FDD86252 Series

This N-Channel MOSFET is produced using an advanced Power Trench®process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet

Package Drawing-369AS-DPAK3 6.10x6.54x2.29, 4.57P

Package Drawing