FDD86252 Series

N-Channel Shielded Gate PowerTrench® MOSFET 150 V, 27 A, 52 mΩ

Catalog

N-Channel Shielded Gate PowerTrench® MOSFET 150 V, 27 A, 52 mΩ

Part	Technology	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Vgs (Max)	Power Dissipation (Max)
ON Semiconductor FDD86252	MOSFET (Metal Oxide)	3.1 W 89 W	6 V 10 V	TO-252AA	-55 °C	150 °C	N-Channel	5 A 27 A	985 pF	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	16 nC	150 V	4 V	52 mOhm	20 V
ON Semiconductor FDD86250	MOSFET (Metal Oxide)	3.1 W	6 V 10 V	TO-252AA	-55 °C	150 °C	N-Channel	8 A 50 A	2110 pF	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3		150 V	4 V	22 mOhm	20 V	132 W

Catalog

N-Channel Shielded Gate PowerTrench® MOSFET 150 V, 27 A, 52 mΩ

Key Features

• Shielded Gate MOSFET Technology

• Max rDS(on)= 22 mΩ at VGS= 10 V, ID= 8 A

• Max rDS(on)= 31 mΩ at VGS= 6 V, ID= 6.5 A

• 100% UIL tested

• RoHS Compliant

Description

This N-Channel MOSFET is produced using an advanced Power Trench®process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.