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Discrete Semiconductor Products
JANTXV2N3055
ObsoleteMicrochip Technology
POWER BJT TO-3 ROHS COMPLIANT: YES
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Documents2N3055
Discrete Semiconductor Products
JANTXV2N3055
ObsoleteMicrochip Technology
POWER BJT TO-3 ROHS COMPLIANT: YES
Deep-Dive with AI
Documents2N3055
Technical Specifications
Parameters and characteristics for this part
| Specification | JANTXV2N3055 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 15 A |
| Current - Collector Cutoff (Max) [Max] | 1 mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 20 |
| Grade | Military |
| Mounting Type | Through Hole |
| Package / Case | TO-3 |
| Power - Max [Max] | 6 W |
| Qualification | MIL-PRF-19500/407 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 2 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 70 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Microchip Direct | N/A | 1 | $ 70.55 | |
| Newark | Each | 100 | $ 65.51 | |
| 500 | $ 62.99 | |||
Description
General part information
JANTXV2N3055-Transistor Series
This specification covers the performance requirements for NPN, silicon, power, 2N3055 transistor. Three levels of product assurance (JAN, JANTX and JANTXV) is provided for each device type as specified in MIL-PRF-19500/407. The device package outline is a TO-204AA (similar to TO-3) for all encapsulated device types.
Documents
Technical documentation and resources
