Discrete Semiconductor Products
STP105N3LL
ActiveSTMicroelectronics
N-CHANNEL 30 V, 2.7 MOHM TYP., 150 A STRIPFET H6 POWER MOSFET IN A TO-220 PACKAGE
Discrete Semiconductor Products
STP105N3LL
ActiveSTMicroelectronics
N-CHANNEL 30 V, 2.7 MOHM TYP., 150 A STRIPFET H6 POWER MOSFET IN A TO-220 PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STP105N3LL |
|---|---|
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 42 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 3100 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 175 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) [Max] | 140 W |
| Rds On (Max) @ Id, Vgs | 3.5 mOhm |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 1435 | $ 1.80 | |
Description
General part information
STP105N3LL Series
This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.