Discrete Semiconductor Products
JANTX2N3715
ActiveMicrochip Technology
NPN SILICON HIGH-POWER 60V TO 80V, 10A
Deep-Dive with AI
Search across all available documentation for this part.
Documents2N3715 2N3716
Discrete Semiconductor Products
JANTX2N3715
ActiveMicrochip Technology
NPN SILICON HIGH-POWER 60V TO 80V, 10A
Deep-Dive with AI
Documents2N3715 2N3716
Technical Specifications
Parameters and characteristics for this part
| Specification | JANTX2N3715 |
|---|---|
| Current - Collector Cutoff (Max) [Max] | 1 mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 50 |
| Grade | Military |
| Mounting Type | Through Hole |
| Package / Case | TO-3, TO-204AA |
| Power - Max [Max] | 5 W |
| Qualification | MIL-PRF-19500/408 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic [Max] | 2.5 V |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 52.15 | |
| Microchip Direct | N/A | 1 | $ 56.15 | |
Description
General part information
JANTX2N3715-Transistor Series
This specification covers the performance requirements for NPN, silicon, high-power 2N3715 and 2N3716 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/408.
Documents
Technical documentation and resources