Discrete Semiconductor Products

IRFPF30

Obsolete

MOSFET N-CH 900V 3.6A TO247-3

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 900V 3.6A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	IRFPF30

Current - Continuous Drain (Id) @ 25°C	3.6 A
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	78 nC
Input Capacitance (Ciss) (Max) @ Vds	1200 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	3.7 Ohm
Supplier Device Package	TO-247AC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Technology	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Drain to Source Voltage (Vdss)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]
Vishay General Semiconductor - Diodes Division IRFPF30	125 W	3.6 A	20 V	TO-247AC	-55 °C	150 °C	TO-247-3	MOSFET (Metal Oxide)	10 V	3.7 Ohm	4 V	1200 pF	N-Channel	900 V	Through Hole	78 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 900 V 3.6A (Tc) 125W (Tc) Through Hole TO-247AC

Technical documentation and resources