IRFPF30 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET N-CH 900V 3.6A TO247-3
| Part | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Technology | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Drain to Source Voltage (Vdss) | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 125 W | 3.6 A | 20 V | TO-247AC | -55 °C | 150 °C | TO-247-3 | MOSFET (Metal Oxide) | 10 V | 3.7 Ohm | 4 V | 1200 pF | N-Channel | 900 V | Through Hole | 78 nC |