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TO-39
Discrete Semiconductor Products

2N4238

Active
Microchip Technology

60V NPN POWER BJT THT TO-39 ROHS COMPLIANT: YES

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Search across all available documentation for this part.

TO-39
Discrete Semiconductor Products

2N4238

Active
Microchip Technology

60V NPN POWER BJT THT TO-39 ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification2N4238
Current - Collector (Ic) (Max) [Max]1 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce30 hFE
Mounting TypeThrough Hole
Operating Temperature [Max]200 °C
Operating Temperature [Min]-65 ░C
Package / CaseTO-39-3 Metal Can, TO-205AD
Power - Max [Max]1 W
Supplier Device PackageTO-39
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic600 mV
Voltage - Collector Emitter Breakdown (Max)60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 35.35
Microchip DirectN/A 1$ 38.07
NewarkEach 100$ 35.35
500$ 33.99

Description

General part information

2N4238-Transistor Series

This specification covers the performance requirements for NPN, silicon, amplifier, 2N4237, 2N4238 and 2N4239 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/581. The device package outline is TO-205AD (formerly TO-39).

Documents

Technical documentation and resources