Discrete Semiconductor Products

NTMFSC1D9N06HL

Obsolete

ON Semiconductor

MOSFET - POWER, SINGLE, N-CHANNEL, DUAL COOLTM, DFN8 5X6. 15, 60V, 1.9M, 199A

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Discrete Semiconductor Products

NTMFSC1D9N06HL

Obsolete

ON Semiconductor

MOSFET - POWER, SINGLE, N-CHANNEL, DUAL COOLTM, DFN8 5X6. 15, 60V, 1.9M, 199A

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	NTMFSC1D9N06HL

Current - Continuous Drain (Id) @ 25°C	30 A, 199 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	64 nC
Input Capacitance (Ciss) (Max) @ Vds	4910 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	166 W, 3.8 W
Rds On (Max) @ Id, Vgs	1.9 mOhm
Supplier Device Package	8-DFN (5x6.15)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

NTMFSC1D9N06HL Series

MOSFET - Power, Single, N-Channel, DUAL COOLTM, DFN8 5x6. 15, 60V, 1.9m, 199A

Part	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Technology	Mounting Type	FET Type	Drain to Source Voltage (Vdss)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Supplier Device Package	Rds On (Max) @ Id, Vgs
ON Semiconductor NTMFSC1D9N06HL	2 V	30 A 199 A	-55 °C	175 ░C	4.5 V 10 V	8-PowerVDFN	MOSFET (Metal Oxide)	Surface Mount	N-Channel	60 V	20 V	64 nC	4910 pF	3.8 W 166 W	8-DFN (5x6.15)	1.9 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

ON Semiconductor	N/A	1	$ 1.34

Description

General part information

NTMFSC1D9N06HL Series

This N-Channel MOSFET is produced using ON Semiconductor’s advanced Power Trench®process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.

Documents

Technical documentation and resources