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Discrete Semiconductor Products

2N5745

Active
Microchip Technology

80 V POWER BJT TO-3 ROHS COMPLIANT: YES

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Search across all available documentation for this part.

Documents2N4399 2N5745
Discrete Semiconductor Products

2N5745

Active
Microchip Technology

80 V POWER BJT TO-3 ROHS COMPLIANT: YES

Deep-Dive with AI

Documents2N4399 2N5745

Technical Specifications

Parameters and characteristics for this part

Specification2N5745
Current - Collector (Ic) (Max)20 A
Current - Collector Cutoff (Max) [Max]100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce15 hFE
Mounting TypeThrough Hole
Operating Temperature [Max]200 C
Operating Temperature [Min]-55 °C
Package / CaseTO-3, TO-204AA
Power - Max [Max]5 W
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic1 V
Voltage - Collector Emitter Breakdown (Max) [Max]80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 46.64
Microchip DirectN/A 1$ 50.23
NewarkEach 100$ 46.64
500$ 44.85

Description

General part information

2N5745-Transistor Series

This specification covers the performance requirements for PNP silicon, high-power, 2N4399 and 2N5745 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/433. The device packages for the encapsulated device types are as follows: TO-204AA (TO-3).

Documents

Technical documentation and resources