Discrete Semiconductor Products
STGWA19NC60HD
ActiveSTMicroelectronics
31 A, 600 V, FAST IGBT WITH ULTRAFAST DIODE
Discrete Semiconductor Products
STGWA19NC60HD
ActiveSTMicroelectronics
31 A, 600 V, FAST IGBT WITH ULTRAFAST DIODE
Technical Specifications
Parameters and characteristics for this part
| Specification | STGWA19NC60HD |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 52 A |
| Current - Collector Pulsed (Icm) | 60 A |
| Gate Charge | 53 nC |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 208 W |
| Reverse Recovery Time (trr) | 31 ns |
| Supplier Device Package | TO-247 Long Leads |
| Switching Energy | 85 µJ, 189 µJ |
| Td (on/off) @ 25°C | 97 ns, 25 ns |
| Test Condition | 12 A, 15 V, 390 V, 10 Ohm |
| Vce(on) (Max) @ Vge, Ic | 2.5 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 600 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 3.09 | |
| 30 | $ 2.45 | |||
| 120 | $ 2.10 | |||
| 510 | $ 1.87 | |||
| 1020 | $ 1.60 | |||
| 2010 | $ 1.50 | |||
| 5010 | $ 1.44 | |||
Description
General part information
STGWA19NC60HD Series
This device uses the advanced PowerMESH process resulting in an excellent trade-off between switching performance and low on-state behavior.