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ROHM RBR10NS40AFHTL
Discrete Semiconductor Products

STB45N30M5

Active
STMicroelectronics

POWER MOSFET, N CHANNEL, 300 V, 53 A, 40 MOHM, TO-263 (D2PAK), 3 PINS, SURFACE MOUNT

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ROHM RBR10NS40AFHTL
Discrete Semiconductor Products

STB45N30M5

Active
STMicroelectronics

POWER MOSFET, N CHANNEL, 300 V, 53 A, 40 MOHM, TO-263 (D2PAK), 3 PINS, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

SpecificationSTB45N30M5
Current - Continuous Drain (Id) @ 25°C53 A
Drain to Source Voltage (Vdss)300 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs95 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]4240 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)250 W
Rds On (Max) @ Id, Vgs40 mOhm
Supplier Device PackageTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 1900$ 7.83
NewarkEach (Supplied on Cut Tape) 1$ 9.02
10$ 6.83
25$ 6.43
50$ 6.02
100$ 5.62
250$ 5.44
500$ 5.25
1000$ 5.24

Description

General part information

STB45N30M5 Series

This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency.