Discrete Semiconductor Products

STW20N95K5

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STMicroelectronics

MOSFET TRANSISTOR, N CHANNEL, 17.5 A, 950 V, 0.275 OHM, 10 V, 4 V ROHS COMPLIANT: YES

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DocumentsSTW20N95K5 | Datasheet +16

Discrete Semiconductor Products

STW20N95K5

Active

STMicroelectronics

MOSFET TRANSISTOR, N CHANNEL, 17.5 A, 950 V, 0.275 OHM, 10 V, 4 V ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsSTW20N95K5 | Datasheet +16

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STW20N95K5

Current - Continuous Drain (Id) @ 25°C	17.5 A
Drain to Source Voltage (Vdss)	950 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	40 nC
Input Capacitance (Ciss) (Max) @ Vds	1500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	250 W
Rds On (Max) @ Id, Vgs	330 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

STW20N95K5 Series

N-channel 950 V, 0.275 Ohm typ., 17.5 A MDmesh K5 Power MOSFET in a TO-247 package

Part	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Package / Case	Vgs (Max)	Technology	Supplier Device Package	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]
STMicroelectronics STW20N95K5	330 mOhm	1500 pF	40 nC	N-Channel	TO-247-3	30 V	MOSFET (Metal Oxide)	TO-247-3	250 W	17.5 A	950 V	5 V	10 V	Through Hole	150 °C	-55 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	191	$ 7.28
Newark	Each	1	$ 9.12
		10	$ 9.06
		25	$ 6.26
		50	$ 5.93
		100	$ 5.60
		250	$ 5.19

Description

General part information

STW20N95K5 Series

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.