TP2104N3-G-P003
ActiveMOSFET, P-CHANNEL ENHANCEMENT-MODE, -40V, 6.0 OHM
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TP2104N3-G-P003
ActiveMOSFET, P-CHANNEL ENHANCEMENT-MODE, -40V, 6.0 OHM
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Technical Specifications
Parameters and characteristics for this part
| Specification | TP2104N3-G-P003 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 175 mA |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 60 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-226-3, TO-92-3 |
| Power Dissipation (Max) | 740 mW |
| Rds On (Max) @ Id, Vgs | 6 Ohm |
| Supplier Device Package | TO-92-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2 V |
TP2104 Series
MOSFET, P-Channel Enhancement-Mode, -40V, 6.0 Ohm
| Part | Technology | FET Type | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Vgs(th) (Max) @ Id | Vgs (Max) | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Microchip Technology | MOSFET (Metal Oxide) | P-Channel | 740 mW | 175 mA | Through Hole | -55 °C | 150 °C | 40 V | 4.5 V 10 V | TO-226-3 TO-92-3 | 2 V | 20 V | 6 Ohm | 60 pF | TO-92-3 |
Microchip Technology | MOSFET (Metal Oxide) | P-Channel | 740 mW | 175 mA | Through Hole | -55 °C | 150 °C | 40 V | 4.5 V 10 V | TO-226-3 TO-92-3 | 2 V | 20 V | 6 Ohm | 60 pF | TO-92-3 |
 Microchip Technology | MOSFET (Metal Oxide) | P-Channel | 360 mW | 160 mA | Surface Mount | -55 °C | 150 °C | 40 V | 4.5 V 10 V | SC-59 SOT-23-3 TO-236-3 | 2 V | 20 V | 6 Ohm | 60 pF | TO-236AB (SOT23) |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.89 | |
| 25 | $ 0.75 | |||
| 100 | $ 0.68 | |||
| Tape & Reel (TR) | 2000 | $ 0.68 | ||
| Microchip Direct | T/R | 1 | $ 0.89 | |
| 25 | $ 0.75 | |||
| 100 | $ 0.68 | |||
| 1000 | $ 0.56 | |||
| 5000 | $ 0.53 | |||
| 10000 | $ 0.49 | |||
Description
General part information
TP2104 Series
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.