Discrete Semiconductor Products

IXTA96P085T-TRL

Active

Littelfuse/Commercial Vehicle Products

POWER MOSFET, P CHANNEL, 85 V, 96 A, 0.013 OHM, TO-263AA, SURFACE MOUNT

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DocumentsDatasheet Product Change Notice EN

Discrete Semiconductor Products

IXTA96P085T-TRL

Active

Littelfuse/Commercial Vehicle Products

POWER MOSFET, P CHANNEL, 85 V, 96 A, 0.013 OHM, TO-263AA, SURFACE MOUNT

Deep-Dive with AI

DocumentsDatasheet Product Change Notice EN

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXTA96P085T-TRL

Current - Continuous Drain (Id) @ 25°C	96 A
Drain to Source Voltage (Vdss)	85 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	180 nC
Input Capacitance (Ciss) (Max) @ Vds	13100 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	298 W
Rds On (Max) @ Id, Vgs [Max]	13 mOhm
Supplier Device Package	TO-263AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	15 V
Vgs(th) (Max) @ Id	4 V

IXTA96P085T Series

DiscMSFT PChan-Trench Gate TO-263D2

Part	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	FET Type	Technology	Package / Case	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C
Littelfuse/Commercial Vehicle Products IXTA96P085T	4 V	13100 pF	Surface Mount	10 V	298 W	TO-263AA	13 mOhm	-55 °C	150 °C	15 V	P-Channel	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	85 V	180 nC	96 A
Littelfuse/Commercial Vehicle Products IXTA96P085T-TRL	4 V	13100 pF	Surface Mount	10 V	298 W	TO-263AA	13 mOhm	-55 °C	150 °C	15 V	P-Channel	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	85 V	180 nC	96 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 6.26
		10	$ 5.37
		100	$ 4.47
	Digi-Reel®	1	$ 6.26
		10	$ 5.37
		100	$ 4.47
	Tape & Reel (TR)	800	$ 3.95
		1600	$ 3.55
		2400	$ 3.33
Newark	Each (Supplied on Cut Tape)	1	$ 6.95
		10	$ 5.12
		25	$ 4.66

Description

General part information

IXTA96P085T Series

Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching