IXTA96P085T Series

DiscMSFT PChan-Trench Gate TO-263D2

Manufacturer: Littelfuse/Commercial Vehicle Products

Catalog

DiscMSFT PChan-Trench Gate TO-263D2

Part	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	FET Type	Technology	Package / Case	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C
Littelfuse/Commercial Vehicle Products IXTA96P085T	4 V	13100 pF	Surface Mount	10 V	298 W	TO-263AA	13 mOhm	-55 °C	150 °C	15 V	P-Channel	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	85 V	180 nC	96 A
Littelfuse/Commercial Vehicle Products IXTA96P085T-TRL	4 V	13100 pF	Surface Mount	10 V	298 W	TO-263AA	13 mOhm	-55 °C	150 °C	15 V	P-Channel	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	85 V	180 nC	96 A

Catalog

DiscMSFT PChan-Trench Gate TO-263D2

Key Features

• Fast intrinsic diode

• Low Qgand RDSon

• Avalanche rated

• Extended FBSOA

• International standard packages

Description

Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching