Discrete Semiconductor Products
KSB1151YS
ActiveON Semiconductor
TRANS GP BJT PNP 60V 5A 1300MW 3-PIN TO-126 BAG
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Discrete Semiconductor Products
KSB1151YS
ActiveON Semiconductor
TRANS GP BJT PNP 60V 5A 1300MW 3-PIN TO-126 BAG
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | KSB1151YS |
|---|---|
| Current - Collector (Ic) (Max) | 5 A |
| Current - Collector Cutoff (Max) [Max] | 10 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 100 |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-225AA, TO-126-3 |
| Power - Max | 1.3 W |
| Supplier Device Package | TO-126-3 |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 300 mV |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
KSB1151 Series
PNP Epitaxial Silicon Transistor
Documents
Technical documentation and resources