Catalog
PNP Epitaxial Silicon Transistor
Key Features
• Low Collector-Emitter Saturation Voltage
• Large Collector Current
• High Power Dissipation: PC= 1.3 W (Ta=25°C)
• Complement to KSD1691
Beta
⌘K
PNP Epitaxial Silicon Transistor
PNP Epitaxial Silicon Transistor
| Part | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Mounting Type | Transistor Type | Current - Collector (Ic) (Max) | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) [Max] | Package / Case | Operating Temperature | Supplier Device Package | Voltage - Collector Emitter Breakdown (Max) | Power - Max |
|---|---|---|---|---|---|---|---|---|---|---|---|
 ON Semiconductor | 100 | Through Hole | PNP | 5 A | 300 mV | 10 µA | TO-126-3 TO-225AA | 150 °C | TO-126-3 | 60 V | 1.3 W |