Discrete Semiconductor Products
STD60NF55LT4
ActiveSTMicroelectronics
POWER MOSFET, N CHANNEL, 55 V, 30 A, 0.012 OHM, TO-252 (DPAK), SURFACE MOUNT
Discrete Semiconductor Products
STD60NF55LT4
ActiveSTMicroelectronics
POWER MOSFET, N CHANNEL, 55 V, 30 A, 0.012 OHM, TO-252 (DPAK), SURFACE MOUNT
Technical Specifications
Parameters and characteristics for this part
| Specification | STD60NF55LT4 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 60 A |
| Drain to Source Voltage (Vdss) | 55 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 56 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1950 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Power Dissipation (Max) | 100 W |
| Rds On (Max) @ Id, Vgs | 15 mOhm |
| Supplier Device Package | DPAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 15 V |
| Vgs(th) (Max) @ Id | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STD60NF55L Series
This MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Documents
Technical documentation and resources