Discrete Semiconductor Products

GB01SLT12-214

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DIODE SIL CARBIDE 1.2KV 2.5A SMB

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Discrete Semiconductor Products

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DIODE SIL CARBIDE 1.2KV 2.5A SMB

Technical Specifications

Parameters and characteristics for this part

Specification	GB01SLT12-214

Capacitance @ Vr, F	69 pF, 61 pF
Current - Average Rectified (Io)	2.5 A, 1 A
Current - Reverse Leakage @ Vr	10 µA, 5 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SMB, DO-214AA
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	DO-214AA (SMB)
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.8 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Voltage - Forward (Vf) (Max) @ If	Capacitance @ Vr, F	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Package / Case	Supplier Device Package	Reverse Recovery Time (trr)	Speed	Mounting Type
GeneSiC Semiconductor GB01SLT12-252	175 ░C	-55 °C	SiC (Silicon Carbide) Schottky	1.8 V	69 pF	1 A	1.2 kV	2 µA	DPAK (2 Leads + Tab) SC-63 TO-252-3	TO-252	0 ns	500 mA	Surface Mount
GeneSiC Semiconductor GB01SLT12-214	175 ░C	-55 °C	SiC (Silicon Carbide) Schottky	1.8 V	61 pF 69 pF	1 A 2.5 A	1.2 kV	5 µA 10 µA	DO-214AA SMB	DO-214AA (SMB)	0 ns	500 mA	Surface Mount

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General part information

Diode 1200 V 2.5A Surface Mount DO-214AA (SMB)

Technical documentation and resources