GB01SLT12 Series

Catalog

DIODE SIL CARBIDE 1.2KV 1A TO252

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Voltage - Forward (Vf) (Max) @ If	Capacitance @ Vr, F	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Package / Case	Supplier Device Package	Reverse Recovery Time (trr)	Speed	Mounting Type
GeneSiC Semiconductor GB01SLT12-252	175 ░C	-55 °C	SiC (Silicon Carbide) Schottky	1.8 V	69 pF	1 A	1.2 kV	2 µA	DPAK (2 Leads + Tab) SC-63 TO-252-3	TO-252	0 ns	500 mA	Surface Mount
GeneSiC Semiconductor GB01SLT12-214	175 ░C	-55 °C	SiC (Silicon Carbide) Schottky	1.8 V	61 pF 69 pF	1 A 2.5 A	1.2 kV	5 µA 10 µA	DO-214AA SMB	DO-214AA (SMB)	0 ns	500 mA	Surface Mount