Specification	NTTFS012N10MDTAG

Current - Continuous Drain (Id) @ 25°C	45 A, 9.2 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	13 nC
Input Capacitance (Ciss) (Max) @ Vds	965 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power Dissipation (Max)	62 W, 2.7 W
Rds On (Max) @ Id, Vgs	14.4 mOhm
Supplier Device Package	8-WDFN (3.3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

NTTFS012N10MD Series

N-Channel Shielded Gate PowerTrench® MOSFET 100V, 45A, 14.4mΩ

Part	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Package / Case	Vgs (Max)	FET Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Technology	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)
ON Semiconductor NTTFS012N10MDTAG	965 pF	Surface Mount	8-PowerWDFN	20 V	N-Channel	14.4 mOhm	9.2 A 45 A	MOSFET (Metal Oxide)	6 V 10 V	8-WDFN (3.3x3.3)	4 V	2.7 W 62 W	13 nC	-55 °C	150 °C	100 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.17
		10	$ 1.39
		100	$ 0.94
		500	$ 0.75
	Tape & Reel (TR)	1500	$ 0.66
		3000	$ 0.61
		4500	$ 0.61
Newark	Each (Supplied on Full Reel)	1	$ 0.83
		3000	$ 0.80
		6000	$ 0.73
		12000	$ 0.66
		18000	$ 0.63
		30000	$ 0.62
ON Semiconductor	N/A	1	$ 0.56

Description

General part information

NTTFS012N10MD Series

This N-Channel MV MOSFET is produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with very low Qg and Qoss.