NTTFS012N10MD Series

N-Channel Shielded Gate PowerTrench® MOSFET 100V, 45A, 14.4mΩ

Catalog

N-Channel Shielded Gate PowerTrench® MOSFET 100V, 45A, 14.4mΩ

Part	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Package / Case	Vgs (Max)	FET Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Technology	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)
ON Semiconductor NTTFS012N10MDTAG	965 pF	Surface Mount	8-PowerWDFN	20 V	N-Channel	14.4 mOhm	9.2 A 45 A	MOSFET (Metal Oxide)	6 V 10 V	8-WDFN (3.3x3.3)	4 V	2.7 W 62 W	13 nC	-55 °C	150 °C	100 V

Catalog

N-Channel Shielded Gate PowerTrench® MOSFET 100V, 45A, 14.4mΩ

Key Features

• Shielded Gate MOSFET Technology

• Max rDS(on)= 14.4 mΩ at VGS= 10 V, ID= 15 A

• Max rDS(on)= 21 mΩ at VGS= 6 V, ID= 7.5 A

• 50% lower Qrrthan other MOSFET suppliers

• Lowers switching noise/EMI

• MSL1 robust package design

• 100% UIL tested

• RoHS Compliant

• Very Low RDS*Qoss

Description

This N-Channel MV MOSFET is produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with very low Qg and Qoss.