STMicroelectronics-ACST830-8T TRIACs TRIAC 800V 84A 3-Pin(3+Tab) TO-220AB Tube

Discrete Semiconductor Products

STP18N60M6

Obsolete

STMicroelectronics

TRANS MOSFET N-CH 600V 13A 3-PIN(3+TAB) TO-220AB TUBE

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Discrete Semiconductor Products

STP18N60M6

Obsolete

STMicroelectronics

TRANS MOSFET N-CH 600V 13A 3-PIN(3+TAB) TO-220AB TUBE

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STP18N60M6

Current - Continuous Drain (Id) @ 25°C	13 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	16.8 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	650 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	110 W
Rds On (Max) @ Id, Vgs	280 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4.75 V

STP18 Series

N-channel 650 V, 198 mOhm typ., 15 A MDmesh M5 Power MOSFET in a TO-220 package

Part	Package / Case	Mounting Type	Power Dissipation (Max)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Technology	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Max]	Operating Temperature [Min]
STMicroelectronics STP18N65M2	TO-220-3	Through Hole	110 W	TO-220	10 V	330 mOhm	150 °C	12 A	770 pF	25 V	MOSFET (Metal Oxide)	650 V	4 V	20 nC	N-Channel
STMicroelectronics STP18N65M5	TO-220-3	Through Hole	110 W	TO-220	10 V	220 mOhm		15 A	1240 pF	25 V	MOSFET (Metal Oxide)	650 V	5 V		N-Channel	31 nC	150 °C	-55 °C
STMicroelectronics STP18N60M6	TO-220-3	Through Hole	110 W	TO-220	10 V	280 mOhm		13 A	650 pF	25 V	MOSFET (Metal Oxide)	600 V	4.75 V	16.8 nC	N-Channel		150 °C	-55 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 1.10

Description

General part information

STP18 Series

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.

Documents

Technical documentation and resources