Specification	NVMYS021N10MCLTWG

Current - Continuous Drain (Id) @ 25°C	8.4 A, 31 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	13 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	850 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-1023, 4-LFPAK
Power Dissipation (Max)	3.6 W, 49 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	23 mOhm
Supplier Device Package	LFPAK4
Supplier Device Package [x]	5
Supplier Device Package [y]	6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

NVMYS021N10MCL Series

MOSFET – Power, Single N-Channel 100 V, 23 mΩ, 31 A

Part	Technology	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package [x]	Supplier Device Package	Supplier Device Package [y]	Vgs(th) (Max) @ Id	Vgs (Max)	Mounting Type	Grade	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Rds On (Max) @ Id, Vgs	Qualification	Drain to Source Voltage (Vdss)
ON Semiconductor NVMYS021N10MCLTWG	MOSFET (Metal Oxide)	N-Channel	4.5 V 10 V	5	LFPAK4	6	3 V	20 V	Surface Mount	Automotive	8.4 A 31 A	13 nC	-55 °C	175 ░C	3.6 W 49 W	850 pF	SOT-1023 4-LFPAK	23 mOhm	AEC-Q101	100 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.74
	Digi-Reel®	1	$ 1.74
	Tape & Reel (TR)	3000	$ 0.76
		6000	$ 0.74
Newark	Each (Supplied on Full Reel)	3000	$ 0.92
		6000	$ 0.87
		12000	$ 0.79
		18000	$ 0.76
		30000	$ 0.73
ON Semiconductor	N/A	1	$ 0.78

General part information

MOSFET – Power, Single N-Channel 100 V, 23 mΩ, 31 A

Technical documentation and resources