MOSFET – Power, Single N-Channel 100 V, 23 mΩ, 31 A
MOSFET – Power, Single N-Channel 100 V, 23 mΩ, 31 A
MOSFET – Power, Single N-Channel 100 V, 23 mΩ, 31 A
| Part | Technology | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package [x] | Supplier Device Package | Supplier Device Package [y] | Vgs(th) (Max) @ Id | Vgs (Max) | Mounting Type | Grade | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Rds On (Max) @ Id, Vgs | Qualification | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 ON Semiconductor | MOSFET (Metal Oxide) | N-Channel | 4.5 V 10 V | 5 | LFPAK4 | 6 | 3 V | 20 V | Surface Mount | Automotive | 8.4 A 31 A | 13 nC | -55 °C | 175 ░C | 3.6 W 49 W | 850 pF | SOT-1023 4-LFPAK | 23 mOhm | AEC-Q101 | 100 V |