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STPSC6TH13TI
Discrete Semiconductor Products

STTH806TTI

Active
STMicroelectronics

RECTIFIER DIODE, DUAL SERIES, 600 V, 8 A, 3.6 V, 13 NS, 80 A ROHS COMPLIANT: YES

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STPSC6TH13TI
Discrete Semiconductor Products

STTH806TTI

Active
STMicroelectronics

RECTIFIER DIODE, DUAL SERIES, 600 V, 8 A, 3.6 V, 13 NS, 80 A ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTTH806TTI
Current - Average Rectified (Io) (per Diode)8 A
Current - Reverse Leakage @ Vr10 µA
Diode Configuration1 Pair Series Connection
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]150 °C
Package / CaseTO-220-3
Reverse Recovery Time (trr)30 ns
Speed500 ns, 200 mA
Supplier Device PackageTO-220AB Insulated
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]600 V
Voltage - Forward (Vf) (Max) @ If3.6 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 367$ 1.24
Tube 1$ 1.74
50$ 1.40
100$ 1.15
500$ 0.97
1000$ 0.83
2000$ 0.79
5000$ 0.76
10000$ 0.73
NewarkEach 1$ 2.08
10$ 1.46
100$ 1.38
500$ 1.25
1000$ 1.14
2500$ 1.09

Description

General part information

STTH806TTI Series

The TURBOSWITCH "H" is an ultra high performance diode composed of two 300V dice in series. TURBOSWITCH "H" family drastically cuts losses in the associated MOSFET when run at high dIF/dt.ESPECIALLY SUITED AS BOOST DIODE IN CONTINUOUS MODE POWER FACTOR CORRECTORS AND HARD SWITCHING CONDITIONS.DESIGNED FOR HIGH DI/DT OPERATION.ULTRA-FAST RECOVERY CURRENT TO COMPETE WITH GaAs DEVICES. SIZE DIMINUTION OF MOSFET AND HEATSINKS ALLOWED.INTERNAL CERAMIC INSULATED PACKAGE ALLOWS FLEXIBLE HEATSINKING ON COMMON OR SEPARATE HEATSINK.MATCHED DIODES FOR TYPICAL PFC APPLICATION WITHOUT VOLTAGE BALANCE NETWORK.INSULATED VERSION: Insulated voltage = 2500 V(RMS)Capacitance = 7 pF