Discrete Semiconductor Products

IRFD420PBF

LTB

MOSFET N-CH 500V 370MA 4DIP

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Discrete Semiconductor Products

LTB

MOSFET N-CH 500V 370MA 4DIP

Technical Specifications

Parameters and characteristics for this part

Specification	IRFD420PBF

Current - Continuous Drain (Id) @ 25°C	370 mA
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	24 nC
Input Capacitance (Ciss) (Max) @ Vds	360 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	4-DIP (0.300", 7.62mm)
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	3 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Technology	FET Type	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case
Vishay General Semiconductor - Diodes Division IRFD420	4 V	360 pF	500 V	3 Ohm	MOSFET (Metal Oxide)	N-Channel	1 W	-55 °C	150 °C	24 nC	370 mA	20 V	Through Hole	10 V	4-DIP (0.300" 7.62mm)
Vishay General Semiconductor - Diodes Division IRFD420PBF	4 V	360 pF	500 V	3 Ohm	MOSFET (Metal Oxide)	N-Channel	1 W	-55 °C	150 °C	24 nC	370 mA	20 V	Through Hole	10 V	4-DIP (0.300" 7.62mm)

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General part information

N-Channel 500 V 370mA (Ta) 1W (Ta) Through Hole 4-HVMDIP

Technical documentation and resources