IRFD420 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 500V 370MA 4DIP
| Part | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Technology | FET Type | Power Dissipation (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 4 V | 360 pF | 500 V | 3 Ohm | MOSFET (Metal Oxide) | N-Channel | 1 W | -55 °C | 150 °C | 24 nC | 370 mA | 20 V | Through Hole | 10 V | 4-DIP (0.300" 7.62mm) |
Vishay General Semiconductor - Diodes Division | 4 V | 360 pF | 500 V | 3 Ohm | MOSFET (Metal Oxide) | N-Channel | 1 W | -55 °C | 150 °C | 24 nC | 370 mA | 20 V | Through Hole | 10 V | 4-DIP (0.300" 7.62mm) |