Discrete Semiconductor Products

STB7ANM60N

LTB

STMicroelectronics

N-CHANNEL 600 V, 800 MOHM TYP., 5 A MDMESH II POWER MOSFET IN A D2PAK PACKAGE

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Search across all available documentation for this part.

DocumentsSTB7ANM60N | Datasheet UM1575 +17

Discrete Semiconductor Products

STB7ANM60N

LTB

STMicroelectronics

N-CHANNEL 600 V, 800 MOHM TYP., 5 A MDMESH II POWER MOSFET IN A D2PAK PACKAGE

Deep-Dive with AI

DocumentsSTB7ANM60N | Datasheet UM1575 +17

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STB7ANM60N

Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	363 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	45 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	900 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

STB7ANM60N Series

N-channel 600 V, 800 mOhm typ., 5 A MDmesh II Power MOSFET in a D2PAK package

Part	Grade	Package / Case	Qualification	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Mounting Type	Power Dissipation (Max)	Supplier Device Package	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	FET Type	Technology	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature
STMicroelectronics STB7ANM60N	Automotive	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	AEC-Q101	363 pF	14 nC	600 V	Surface Mount	45 W	D2PAK	25 V	10 V	4 V	5 A	N-Channel	MOSFET (Metal Oxide)	900 mOhm	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	1748	$ 2.11
Newark	Each (Supplied on Cut Tape)	1	$ 2.42
		10	$ 1.75
		25	$ 1.61
		50	$ 1.46
		100	$ 1.32
		250	$ 1.23
		500	$ 1.13
		1000	$ 1.07

Description

General part information

STB7ANM60N Series

This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.