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MICROCHIP 93C46BT/SN
Discrete Semiconductor Products

FDS4435BZ

Active
ON Semiconductor

POWER MOSFET, P CHANNEL, 30 V, 8.8 A, 0.016 OHM, SOIC, SURFACE MOUNT

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MICROCHIP 93C46BT/SN
Discrete Semiconductor Products

FDS4435BZ

Active
ON Semiconductor

POWER MOSFET, P CHANNEL, 30 V, 8.8 A, 0.016 OHM, SOIC, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

SpecificationFDS4435BZ
Current - Continuous Drain (Id) @ 25°C8.8 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]40 nC
Input Capacitance (Ciss) (Max) @ Vds1845 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Power Dissipation (Max)2.5 W
Rds On (Max) @ Id, Vgs [Max]20 mOhm
Supplier Device Package8-SOIC
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.09
10$ 0.69
100$ 0.45
500$ 0.35
1000$ 0.31
Digi-Reel® 1$ 1.09
10$ 0.69
100$ 0.45
500$ 0.35
1000$ 0.31
Tape & Reel (TR) 2500$ 0.28
5000$ 0.26
7500$ 0.25
12500$ 0.23
17500$ 0.23
ON SemiconductorN/A 1$ 0.24

Description

General part information

FDS4435BZ Series

This P–Channel MOSFET is produced using an advanced PowerTrench®process that has been especially tailored to minimize the on–state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.