FDS4435BZ Series

P-Channel PowerTrench® MOSFET -30V, -8.8A, 20mΩ

Catalog

P-Channel PowerTrench® MOSFET -30V, -8.8A, 20mΩ

Part	Drain to Source Voltage (Vdss)	Package / Case	Package / Case [y]	Package / Case [x]	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Technology	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id
ON Semiconductor FDS4435BZ	30 V	8-SOIC	3.9 mm	0.154 in	25 V	-55 °C	150 °C	40 nC	2.5 W	Surface Mount	8.8 A	1845 pF	MOSFET (Metal Oxide)	8-SOIC	4.5 V 10 V	P-Channel	20 mOhm	3 V

Catalog

P-Channel PowerTrench® MOSFET -30V, -8.8A, 20mΩ

Key Features

• Max rDS(on)= 20mΩ at VGS= –10V, ID= –8.8A

• Max rDS(on)= 35mΩ at VGS= –4.5V, ID= –6.7A

• Extended VGSSrange (–25V) for battery applications

• HBM ESD protection level of ±3.8KV typical (note 3)

• High performance trench technology for extremely low rDS(on)

• High power and current handling capability

• Termination is Lead–free and RoHS compliant

Description

This P–Channel MOSFET is produced using an advanced PowerTrench®process that has been especially tailored to minimize the on–state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.