Zenode.ai Logo
Beta
8-VDFN
Discrete Semiconductor Products

CSD17551Q3A

Active
Texas Instruments

30-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 3 MM X 3 MM, 9 MOHM

8-VDFN
Discrete Semiconductor Products

CSD17551Q3A

Active
Texas Instruments

30-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 3 MM X 3 MM, 9 MOHM

Technical Specifications

Parameters and characteristics for this part

SpecificationCSD17551Q3A
Current - Continuous Drain (Id) @ 25°C12 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]7.8 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]1370 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)2.6 W
Rds On (Max) @ Id, Vgs9 mOhm
Supplier Device Package8-VSONP (3x3.3)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.14
10$ 0.71
100$ 0.47
500$ 0.36
1000$ 0.33
Digi-Reel® 1$ 1.14
10$ 0.71
100$ 0.47
500$ 0.36
1000$ 0.33
Tape & Reel (TR) 2500$ 0.29
5000$ 0.27
7500$ 0.26
12500$ 0.24
17500$ 0.24
Texas InstrumentsLARGE T&R 1$ 0.47
100$ 0.36
250$ 0.27
1000$ 0.19

Description

General part information

CSD17551Q3A Series

This 30 V, 7.8 mΩ, 3.3 mm × 3.3 mm NexFET power MOSFET is designed to minimize losses in power conversion applications.

This 30 V, 7.8 mΩ, 3.3 mm × 3.3 mm NexFET power MOSFET is designed to minimize losses in power conversion applications.