CSD17551Q3A Series

30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 9 mOhm

Catalog

30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 9 mOhm

Part	Vgs (Max)	Rds On (Max) @ Id, Vgs	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Package / Case	FET Type	Vgs(th) (Max) @ Id	Technology
Texas Instruments CSD17551Q3A	20 V	9 mOhm	Surface Mount	1370 pF	-55 °C	150 °C	8-VSONP (3x3.3)	7.8 nC	30 V	4.5 V 10 V	12 A	2.6 W	8-PowerVDFN	N-Channel	2.1 V	MOSFET (Metal Oxide)

Catalog

30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 9 mOhm

Key Features

• Ultra-Low Qgand QgdLow Thermal ResistanceAvalanche RatedPb FreeRoHS CompliantHalogen FreeSON 3.3 mm × 3.3 mm Plastic PackageUltra-Low Qgand QgdLow Thermal ResistanceAvalanche RatedPb FreeRoHS CompliantHalogen FreeSON 3.3 mm × 3.3 mm Plastic Package

Description

This 30 V, 7.8 mΩ, 3.3 mm × 3.3 mm NexFET power MOSFET is designed to minimize losses in power conversion applications. This 30 V, 7.8 mΩ, 3.3 mm × 3.3 mm NexFET power MOSFET is designed to minimize losses in power conversion applications.