Discrete Semiconductor Products
JANTXV2N6649
ActiveMicrochip Technology
60V PNP POWER BJT THT TO-3 ROHS COMPLIANT: YES
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Search across all available documentation for this part.
Documents2N6648 2N6649 2N6650
Discrete Semiconductor Products
JANTXV2N6649
ActiveMicrochip Technology
60V PNP POWER BJT THT TO-3 ROHS COMPLIANT: YES
Deep-Dive with AI
Documents2N6648 2N6649 2N6650
Technical Specifications
Parameters and characteristics for this part
| Specification | JANTXV2N6649 |
|---|---|
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 hFE |
| Grade | Military |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -65 °C |
| Package / Case | TO-3, TO-204AA |
| Power - Max [Max] | 5 W |
| Qualification | MIL-PRF-19500/527 |
| Supplier Device Package | TO-204AA (TO-3) |
| Transistor Type | PNP - Darlington |
| Vce Saturation (Max) @ Ib, Ic | 3 V |
| Vce Saturation (Max) @ Ib, Ic [custom] | 10 A |
| Vce Saturation (Max) @ Ib, Ic [custom] | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 129.25 | |
| Microchip Direct | N/A | 1 | $ 139.19 | |
| Newark | Each | 100 | $ 129.25 | |
| 500 | $ 124.28 | |||
Description
General part information
JANTXV2N6649-Darlington Series
This specification covers the performance requirements for PNP silicon, Darlington power, 2N6648, 2N6649 and 2N6650 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each encapsulated device as specified in MIL-PRF-19500/527.
Documents
Technical documentation and resources