Discrete Semiconductor Products

SISH112DN-T1-GE3

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MOSFET N-CH 30V 11.3A PPAK

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Discrete Semiconductor Products

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MOSFET N-CH 30V 11.3A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SISH112DN-T1-GE3

Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	27 nC
Input Capacitance (Ciss) (Max) @ Vds	2610 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-50 °C
Package / Case	PowerPAK® 1212-8SH
Power Dissipation (Max) [Max]	1.5 W
Rds On (Max) @ Id, Vgs	7.5 mOhm
Supplier Device Package	PowerPAK® 1212-8SH
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.5 V

Part	Rds On (Max) @ Id, Vgs	Technology	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Package / Case	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Mounting Type	Supplier Device Package	Vgs (Max)
Vishay General Semiconductor - Diodes Division SISH112DN-T1-GE3	7.5 mOhm	MOSFET (Metal Oxide)	1.5 V	2610 pF	27 nC	150 °C	-50 °C	N-Channel	PowerPAK® 1212-8SH	30 V	4.5 V 10 V	1.5 W	Surface Mount	PowerPAK® 1212-8SH	12 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 11.3A (Tc) 1.5W (Tc) Surface Mount PowerPAK® 1212-8SH

Technical documentation and resources