SISH112 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 30V 11.3A PPAK
| Part | Rds On (Max) @ Id, Vgs | Technology | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature [Max] | Operating Temperature [Min] | FET Type | Package / Case | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) [Max] | Mounting Type | Supplier Device Package | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 7.5 mOhm | MOSFET (Metal Oxide) | 1.5 V | 2610 pF | 27 nC | 150 °C | -50 °C | N-Channel | PowerPAK® 1212-8SH | 30 V | 4.5 V 10 V | 1.5 W | Surface Mount | PowerPAK® 1212-8SH | 12 V |