JANTX2N918UB
ActiveNPN SILICON HIGH-FREQUENCY 15V, 0.05A
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JANTX2N918UB
ActiveNPN SILICON HIGH-FREQUENCY 15V, 0.05A
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | JANTX2N918UB |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 50 mA |
| Current - Collector Cutoff (Max) [Max] | 1 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 20 |
| Grade | Military |
| Mounting Type | Surface Mount |
| Package / Case | 4-SMD, No Lead |
| Power - Max [Max] | 200 mW |
| Qualification | MIL-PRF-19500/301 |
| Supplier Device Package | UB |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 400 mV |
| Voltage - Collector Emitter Breakdown (Max) | 15 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 26.43 | |
| Microchip Direct | N/A | 1 | $ 28.46 | |
Description
General part information
JANTXV2N918UB-Transistor Series
This specification covers the detail requirements for NPN, silicon, ultra-high frequency 2N918 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/301 and two levels of product assurance (JANHC and JANKC) are provided for unencapsulated die devices. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.
Documents
Technical documentation and resources
