Discrete Semiconductor Products

SI7113DN-T1-E3

LTB

MOSFET P-CH 100V 13.2A PPAK

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Discrete Semiconductor Products

LTB

MOSFET P-CH 100V 13.2A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SI7113DN-T1-E3

Current - Continuous Drain (Id) @ 25°C	13.2 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	55 nC
Input Capacitance (Ciss) (Max) @ Vds	1480 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-50 °C
Package / Case	PowerPAK® 1212-8
Power Dissipation (Max)	3.7 W, 52 W
Rds On (Max) @ Id, Vgs	134 mOhm
Supplier Device Package	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Package / Case	Technology	Vgs(th) (Max) @ Id	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs [Max]	FET Type	Mounting Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
Vishay General Semiconductor - Diodes Division SI7113ADN-T1-GE3	27.8 W	10.8 A	100 V	PowerPAK® 1212-8	MOSFET (Metal Oxide)	2.6 V	20 V	-55 °C	150 °C	4.5 V 10 V	132 mOhm	P-Channel	Surface Mount	PowerPAK® 1212-8	16.5 nC
Vishay General Semiconductor - Diodes Division SI7113DN-T1-E3	3.7 W 52 W	13.2 A	100 V	PowerPAK® 1212-8	MOSFET (Metal Oxide)	3 V	20 V	-50 °C	150 °C	4.5 V 10 V		P-Channel	Surface Mount	PowerPAK® 1212-8		134 mOhm	55 nC	1480 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 100 V 13.2A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

Technical documentation and resources