SI7113 Series

Catalog

MOSFET P-CH 100V 10.8A PPAK

Part	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Package / Case	Technology	Vgs(th) (Max) @ Id	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs [Max]	FET Type	Mounting Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
Vishay General Semiconductor - Diodes Division SI7113ADN-T1-GE3	27.8 W	10.8 A	100 V	PowerPAK® 1212-8	MOSFET (Metal Oxide)	2.6 V	20 V	-55 °C	150 °C	4.5 V 10 V	132 mOhm	P-Channel	Surface Mount	PowerPAK® 1212-8	16.5 nC
Vishay General Semiconductor - Diodes Division SI7113DN-T1-E3	3.7 W 52 W	13.2 A	100 V	PowerPAK® 1212-8	MOSFET (Metal Oxide)	3 V	20 V	-50 °C	150 °C	4.5 V 10 V		P-Channel	Surface Mount	PowerPAK® 1212-8		134 mOhm	55 nC	1480 pF