Specification	FDP070AN06A0

Current - Continuous Drain (Id) @ 25°C	80 A, 15 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	66 nC
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	175 W
Rds On (Max) @ Id, Vgs	7 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

FDP070AN06A0 Series

N-Channel PowerTrench<sup>®</sup> MOSFET 60V, 80A, 7mΩ

Part	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Supplier Device Package	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Technology	Rds On (Max) @ Id, Vgs	FET Type	Vgs(th) (Max) @ Id
ON Semiconductor FDP070AN06A0	-55 °C	175 ░C	Through Hole	60 V	175 W	10 V	TO-220-3	TO-220-3	20 V	15 A 80 A	66 nC	MOSFET (Metal Oxide)	7 mOhm	N-Channel	4 V
ON Semiconductor FDP070AN06A0	-55 °C	175 ░C	Through Hole	60 V	175 W	10 V	TO-220-3	TO-220-3	20 V	15 A 80 A	66 nC	MOSFET (Metal Oxide)	7 mOhm	N-Channel	4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel PowerTrench®MOSFET60 V, 80 A, 7 mΩ

Technical documentation and resources